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| HWC34NC C-Band Power FET Non-Via Hole Chip Autumn 2002 V1 Features * * * * Low Cost GaAs Power FET 1525.0 Outline Dimensions 1392.5 Class A or Class AB Operation 9 8.5 dB Typical Gain at 4 GHz 1235.0 5V to 10V Operation 1077.5 1 10 5 Description 920.0 2 6 The HWC34NC is a power GaAs FET designed for various L-band & S-band applications. 762.5 11 605.0 Absolute Maximum Ratings 447.5 3 12 7 VDS VGS ID IG TCH TSTG PT * Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Channel Temperature Storage Temperature Power Dissipation +15V 290.0 -5V 132.5 4 13 0.0 8 IDSS 6mA 175C -65 to +175C 12W 0.0 444.5 75.5 524.0 * mounted on an infinite heat sink Units: m Thickness: 100 5 Chip size 50 Bond Pads 1-4 (Gate): 100 x 100 Bond Pads 5-8 (Drain): 100 x 100 Bond Pads 9-13(Source): 100 x 100 Electrical Specifications (TA=25C) f = 4 GHz for all RF Tests Symbol IDSS Parameters & Conditions Saturated Current at VDS=3V, VGS=0V Units mA Min. 900 Typ. 1200 Max. 1600 VP Pinch-off Voltage at VDS=3V, ID=60mA V -3.5 -2.0 -1.5 gm P1dB Transconductance at VDS=3V, ID=600mA Power Output at Test Points VDS=10V, ID=0.5 IDSS Gain at 1dB Compression Point VDS=10V, ID=0.5 IDSS Power-Added Efficiency (POUT = P1dB) VDS=10V, ID=0.5 IDSS mS - 700 - dBm 32 33 - G1dB dB 6.5 7.5 - PAE % 25 30 - Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice. HWC34NC C-Band Power FET Non-Via Hole Chip March 2002 V1 Small Signal Common Source Scattering Parameters S-MAGN AND ANGLES VDS=10V, IDS=0.5IDSS (GHz) 2.00 2.50 3.00 3.50 4.00 4.50 5.00 5.50 6.00 6.50 7.00 7.50 8.00 8.50 9.00 9.50 10.00 lS11l 0.741 0.740 0.743 0.739 0.739 0.736 0.733 0.732 0.73 0.730 0.729 0.720 0.716 0.704 0.692 0.673 0.649 ANG -162.95 -167.73 -171.28 -173.74 -176.23 -178.33 179.79 178.19 176.65 175.59 174.46 172.75 170.43 168.33 165.78 163.35 160.96 lS21l 3.027 2.432 2.025 1.731 1.511 1.343 1.206 1.101 1.014 0.943 0.884 0.832 0.788 0.757 0.728 0.712 0.700 ANG 78.58 72.17 66.45 61.37 56.74 52.59 48.98 45.57 42.26 39.40 36.76 34.64 33.00 31.55 29.73 28.60 27.33 lS12l 0.051 0.063 0.074 0.088 0.101 0.116 0.131 0.148 0.167 0.186 0.208 0.231 0.257 0.285 0.318 0.355 0.397 ANG 75.38 77.31 78.97 80.17 80.68 80.95 81.81 81.84 81.32 81.33 80.28 79.21 78.26 76.82 75.03 72.46 70.08 lS22l 0.343 0.368 0.392 0.420 0.449 0.478 0.506 0.524 0.540 0.556 0.564 0.578 0.591 0.602 0.600 0.593 0.589 ANG -149.69 -147.33 -145.34 -144.05 -142.95 -142.34 -142.38 -142.79 -144.48 -145.20 -146.77 -147.87 -148.61 -149.79 -151.32 -154.11 -156.34 Bonding Manner Gate, drain pad: 1 wire on each pad Source pad: 1 wires on each pad Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice. |
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